We are on the cusp of a revolution in the field of Gallium Nitride (GaN) technology, and we're seeking a visionary GaN Metrology Engineer to lead the charge. As a trailblazer in this domain, you will be responsible for developing and optimising cutting-edge metrology techniques for GaN on Si and GaN on Sapphire material systems. Your expertise will be instrumental in driving innovation and pushing the boundaries of what is possible in this exciting field.
Job Description
In your new role you will:
- Development and optimisation of metrology techniques for GaN on Si &GaN on Sapphire material systems
- Performing assessments and tool matching to ensure measurement accuracy and consistency across different tools.
- Researching and developing new metrology methods and technologies to improve defect detection capabilities and overall process throughput.
- Analysing and interpreting metrology data to identify trends, correlate with epi growth & wafer fabrication parameters, and pinpoint potential manufacturing issues.
- Engage with metrology equipment vendors to improve and optimise metrology standards and recipes
Your Profile
You are best equipped for this task if you have:
- Ph.D in Material Science (or) Masters in Material Science / Chemistry/ Solid State Physics with 3+ years of Industry experience (or) Undergraduate degree with 5+ years of Industry experience with focus on III-V Hetero-epitaxy MOCVD material characterisation
- Hands-on metrology experience (AFM/TEM/XRD/P/Ellipsometry/FTIR) with AlGaN/GaN HEMTs systems on Silicon and Sapphire Substrates (critical requirement)
- Good understanding of MOCVD based III-V Hetero-epitaxy processes and their impact on material characterisation
- Expertise in data organisation/data analysis
- Good communication skills and ability to work with cross-functional teams in a global R&D organisation
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Are you in
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