Silicon Germanium Device Engineer

• Design, analyze, and optimize SiGe HBT devices to meet performance targets for RF and analog applications

• Investigate device behavior, including scaling effects, band structure modifications, and thermal impacts under high-frequency operation

• Perform RF characterization of transistors, evaluating parameters such as gain, noise, and linearity

• Conduct measurements using lab equipment including probe stations and Vector Network Analyzers (VNA), supporting on-wafer RF testing

• Develop and validate device models through parameter extraction and comparison with measured data

• Utilize simulation tools (e.g., TCAD and circuit simulators) to predict device performance and guide design improvements

• Collaborate closely with process integration, circuit design, and modeling teams to ensure alignment across development stages

• Analyze experimental data using programming tools such as Python or MATLAB to derive insights and support decision-making

• Prepare technical documentation, reports, and presentations for internal reviews and external stakeholders

Requirements

• Solid understanding of semiconductor device physics, especially SiGe HBTs

• Knowledge of RF fundamentals: S-parameters, gain, noise, and matching

• Experience with TCAD (Sentaurus/Silvaco) and circuit simulators (Spectre, ADS, HSPICE)

• Hands-on experience with RF measurements (VNA, probe stations, on-wafer testing)

• Proficiency in data analysis tools such as Python or MATLAB

• Strong problem-solving skills and attention to detail

• Ability to collaborate across multidisciplinary teams and communicate technical concepts clearly

Disclaimer

The above information on this description has been designed to indicate the general nature, and level, of the work performed by this position. It is not designed to contain, or be interpreted, as a comprehensive inventory of all duties, responsibilities and qualifications required.

We invite interested candidates to write-in with CV and regret that only shortlisted candidates will be contacted for a discussion.

Lee Shiow Chyn
EA12C6130
R1112042
[Confidential Information]