Job Title: Research Fellow (Circuit Design for Carbon Nanotube FET Logic and Emerging Memory)
University-Level Unit: College of Design and Engineering
Faculty/Department-Level Unit: Electrical and Computer Engineering
Employee Category: Research Staff
Location_ONB: Kent Ridge Campus
Posting Start Date: 26/08/2026
Job Description
The Department of Electrical and Computer Engineering (ECE), College of Design and Engineering, is seeking a Research Fellow to lead the circuit design track of a research programme on nanoelectronic integrated circuits — carbon nanotube FET (CNFET) logic, emerging on-chip memories, and their monolithic 3D integration on silicon CMOS.
Key Responsibilities
- Design CNFET digital circuits and standard cells, and build and calibrate CNFET compact models (Verilog-A) against measured device data.
- Design memory macros in emerging memory technologies — including gain cell, oxide-semiconductor based and resistive (RRAM) memories — covering the array and its peripheral circuits (sense amplifiers, write drivers, decoders and drivers, timing and refresh control).
- Carry out device–circuit co-optimisation and variation-aware, defect-tolerant design for immature technologies, and benchmark power, performance and area against silicon CMOS.
- Explore monolithic 3D integration enabled by the low-temperature (BEOL-compatible) flows — memory over logic, and compute-in-memory / edge-AI applications.
- Produce test-vehicle layouts with DRC/LVS closure, coordinate tape-out with the process team and industry partners, and lead the electrical testing and analysis of fabricated chips.
- Publish in leading venues, supervise graduate students, and contribute to invention disclosures and research proposals.
Qualifications
Essential:
- PhD in Electrical Engineering, Microelectronics, Computer Engineering or a closely related field (awarded, or thesis submitted, at the time of application).
- Demonstrated digital and/or mixed-signal IC design experience using a commercial design flow (Cadence Virtuoso and Spectre, synthesis and place-and-route), including full-custom layout with DRC/LVS closure.
- Experience designing memory macros and their peripheral circuits — sense amplifiers, write drivers, decoders and timing control — for SRAM, DRAM, gain cell or emerging memory.
- Compact modelling and device–circuit co-design, including Verilog-A model development and parameter extraction from measured data.
- Statistical and Monte Carlo circuit analysis, and the ability to reason about variability and yield when the technology has no mature PDK.
- Scripting for design automation and data analysis (Python, TCL, SKILL or equivalent).
- A publication record commensurate with career stage, strong written and spoken English, and the ability to work independently and to guide junior researchers.
Desirable
- Circuit design on an emerging device technology — CNFETs, 2D-material FETs, oxide-semiconductor (IGZO/ITO) FETs, RRAM, or ferroelectric devices.
- Monolithic 3D IC design, memory-over-logic partitioning, or thermal-aware physical design.
- Standard-cell library development and characterisation.
- Tape-out and silicon bring-up experience.
- Compute-in-memory accelerator design, or hardware for edge AI.
- Experience working alongside a foundry or an external process partner.
Req ID: 34218
