Research Fellow (ALD Oxide Semiconductor & Short-Channel Transistors)

Interested applicants are invited to apply directly at the NUS Career Portal. Please note your application will only be processed if you apply via NUS Career Portal.

NUS Career Portal link: https://careers.nus.edu.sg/job/Research-Fellow-%28ALD-Oxide-Semiconductor-&-Short-Channel-Transistors%29/32535-en_GB/

We regret that only shortlisted candidates will be notified.

Job Description

The Research Fellow will drive the development of atomic-layer-deposited (ALD) oxide semiconductor (OS) thin-film transistors and aggressively scaled short-channel OS devices for back-end-of-line (BEOL) integration with CMOS. Key responsibilities include:
. Develop and optimize ALD processes for oxide semiconductor channel materials (e.g., IGZO, ITO, IZO) and BEOL-compatible gate dielectrics, including recipe development, precursor evaluation, and post-deposition treatments.
. Design, fabricate, and characterize short-channel OS transistors targeting sub-100 nm channel lengths, with emphasis on contact engineering, access resistance reduction, and threshold voltage control.
. Execute full process flows in the NUS cleanroom, including lithography, etch, deposition, and metallization develop BEOL-compatible integration modules.
. Perform electrical characterization (DC, pulsed I-V, low-frequency noise, TDDB/BTI reliability) and correlate device performance with process conditions and materials properties.
. Prepare manuscripts for top-tier venues (IEDM, VLSI, Nature journals) and present results at international conferences.
. Mentor graduate and undergraduate students, and assist with grant reporting and proposal preparation.

Qualifications

Essential:
. PhD in Electrical Engineering, Materials Science, Applied Physics, Chemical Engineering, or a closely related field.
. Hands-on cleanroom fabrication experience with thin-film transistors or advanced CMOS/BEOL process modules.
. Demonstrated expertise in ALD process development, including familiarity with thermal and plasma-enhanced ALD tools, precursor chemistry, and in-situ/ex-situ film characterization.
. Strong background in semiconductor device physics, transistor electrostatics, and short-channel effects.
. Proficiency in electrical characterization of transistors (transfer/output curves, mobility extraction, subthreshold analysis, reliability testing).
. Track record of first-author publications in reputable device/materials venues.
. Ability to work independently and collaboratively in a multi-disciplinary team.
. Open to fixed-term contract
Desirable:
. Direct experience with oxide semiconductor (IGZO / ITO / IZO / CAAC-IGZO) device fabrication or ALD.
. Experience with TCAD simulation (Sentaurus, Silvaco) or compact modeling.