Sr Assoc Eng Failure Analysis

Responsibilities:

• A committed and self‑disciplined individual who can work night shift independently.

• Strong problem‑solving skills, with the ability to troubleshoot sample preparation challenges under time pressure.

• Perform Transmission Electron Microscopy (TEM) analysis and TEM sample preparation using Focused ion-beam (FIB) microscopy to support semiconductor failure analysis and characterization activities, able work in the night‑shift operations if required.

• Conduct pre‑FIB sample preparation, including but not limited to:

  • Wafer cleaving

  • Optical microscope inspection and defect navigation

  • Sample coating

  • Sample delayering using RIE/polishing

• Operate Focused Ion Beam (FIB) systems to perform precision milling, thinning, and lamella preparation for TEM analysis.

• Conduct TEM profiling and measurement by bright field and scanning mode imaging. EDX analysis on material element.

• Hands‑on experience and knowledge in TEM and FIB is preferred.

• Ensure samples meet quality, cleanliness, and thickness requirements to enable high‑quality TEM imaging.

• Support urgent and critical requests from fabrication and failure analysis teams, demonstrating a strong sense of urgency and ownership.

• Communicate effectively with engineers, peers, and shift counterparts to ensure smooth handover and continuity across shifts.

• Follow laboratory safety procedures, SOPs, and quality standards at all times.

• Actively participate in continuous improvement activities related to TEM sample preparation and night‑shift efficiency.

Requirements:

• Diploma in Engineering (Electrical / Electronics / Mechatronics and Microelectronics Engineering)

• This role requires to work in the 12hr night-shift pattern.

• Fast learning and good hands-on capability

• Hands-on experience on FIB for TEM sample preparation is preferred.

• Basic knowledge in semiconductor field

• Good interpersonal and communication skills, team workers, independent and self-disciplined.