Responsibilities
- Lead end-to-end process integration for RF-SOI technology development from initial concept through qualification and production transfer.
- Define and optimize FEOL, MOL, and BEOL integration schemes to meet target performance metrics for RF devices like switches, LNAs, and tuners.
- Collaborate with device engineering, design, and module teams (lithography, etch, deposition, implant) to optimize linearity, insertion loss, and isolation.
- Execute Design of Experiments (DOE) and data-driven failure analysis to drive yield learning, defect reduction, and parametric improvements.
- Resolve technical integration issues relating to device variability, reliability, and electrical performance correlations.
- Support silicon debug, conduct electrical characterization, and lead technical integration reviews while mentoring junior engineers.
- Interface with foundry and manufacturing partners to facilitate seamless technology transfer and ramp-up.
Requirements
- Master's or PhD in Electrical Engineering, Materials Science, Physics, or a related discipline.
- Minimum 8 years of semiconductor process integration experience with significant exposure to RF technologies and CMOS/SOI flows.
- Deep technical understanding of RF-SOI device physics, integration flows, and module interaction challenges.
- Familiarity with RF device characterization and key performance metrics (e.g., harmonics, linearity, Ron, Coff).
- Strong analytical capabilities with practical experience in DOE, statistical analysis, and yield optimization.
- Proven track record of solving complex integration problems in advanced nodes and leading cross-functional teams.
- Excellent technical leadership, communication, and multi-disciplinary collaboration skills.
Interested candidates who wish to apply for the advertised position, please click on the APPLY button below to send in your resume or send to [Confidential Information]
EA License No: 13C6305
Reg. No.: R1985234 (GOH HOOI MING)
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