Micron Technology, Inc.
As a Senior Cell Film Process Development Engineer at Micron Technology, Inc., you will play a pivotal role in our process technology team, driving the development of deep sub-micron generation production-worthy and cost-effective processes. You will take ownership of both process development and related tool issues for specific films/processes, integrating these processes into corresponding process flows for application in high-density advanced memory parts, primarily Advanced NAND applications.
Responsibilities:
- Collaborate with diverse teams across R&D, integration, pilot line, and high-volume production to achieve timely task completion.
- Plan and implement experiments, and write concise reports detailing the results.
- Suggest process alternatives and evaluate options to improve film properties and process margins.
- Develop new chemistries and hardware for process innovation.
- Define process and equipment strategies for next-generation NAND.
- Design and execute experiments to improve NAND Cell performance.
- Identify and understand failure mechanisms of Cell materials and correlate them with NAND Cell electrical behaviors.
- Deliver innovative solutions for next-generation Advanced NAND Cell technology.
- Drive collaboration with integration, device, and manufacturing teams to address NAND Cell technology gaps.
- Solve complex problems related to process and material development.
- Lead cost-saving initiatives through efficient process and material utilization.
- Correlate process parameters with device cell metrics to optimize performance.
Required Expertise:
- Thin film processing (ALD, CVD) and characterization methods.
- Chemical kinetics, thermal dynamics, plasma physics and chemistry, vacuum physics, and their direct application to thin film deposition processes.
- Electronic material properties resulting from various types of deposited thin films.
- Fundamental characterization of Cell materials and development of new methodologies to project NAND Cell reliability.
- Interactions between process/hardware and device performance.
- Various thin film electrical evaluation methods and techniques such as leakage, impedance, capacitance.
- Experience and knowledge of Fab metrology tools such as optical/electrical methods.
- Knowledge of device physics, including basic MOCAP, MOSFET, and 3D NAND operation.
- Poly-silicon process and hardware development, with emphasis on Si precursor chemistry, grain growth, and crystallization mechanisms.
- Metal-induced crystallization, including deep expertise in Ni CVD process and Ni residue gettering techniques.
- Thin film transistor (TFT) experimentation and device characterization, including electrical performance evaluation and reliability testing.
- 3D NAND cell film formation, with strong understanding of upstream and downstream process integration.
Minimum Qualifications:
- PhD or equivalent experience in Materials Science and Engineering, Chemical Engineering, Physics, Chemistry, Electrical Engineering, or a related field.
- At least 2 years of demonstrated experience in thin films research and development within the major NAND company, preferably with experience in deposition for microelectronic devices.
- Strong interpretation skills for development balanced with integration interaction.
