To be responsible for driving a leading edge process/device developmentand optimization of RFSOI devices in order to meet scaling, performance,reliability, and manufacturability requirements.
To conduct device pcell design, test structure creation and tape out.
To perform extensive process and device TCAD simulation using varioustechniques to optimize device performance and ensuring reliability.
To perform device characterization and analysis with the aid of DC-IVbench test
To work with modeling & PDK team for design enablement, model validation and pcell improvement
Required Skills:
Solid knowledge in semiconductor device physics, especially: Deep understanding device characteristics and device tuning techniques.
Hands-on experience in two out of three below fields are preferred:
TCAD (process & device) simulation and calibration
Work under industrial EDA environment (Cadence, Mentor, Synopsys) for layout creation, drc and lvs check.
Experienced with advanced RFSOI CMOS technologies is a plus.
Strong communication and interpersonal skills.
Devoted professional: you are diligent and deliberate in your work, leveraging your expertise to deliver results without ego.
Avid Learner: you thrive with challenges, seek continuous growth and improvement,and seek data to prove your hypotheses.
Qualification:
Master or Ph. D. in electrical engineering or microelectronics. Fresh graduates are welcome to apply candidate with 2+ years of experience in semiconductor industrial or lab experience are an added advantage.
Lab or industrial experience in TCAD device development is preferred.
