Research Fellow (Ultralow Power Electronics)

Job Description

We are looking for a Research Fellow with experience in realizing two-dimensional (2D) negative capacitance field-effect transistors based on ferroelectric materials for ultralow power electronics applications.

The candidate is expected to:
. Develop device designs, fabrication, and extensive characterization of advanced transistors integrated with two-dimensional transition metal dichalcogenides (2D-TMD) and ferroelectric materials.
. Report experimental results to the Principal Investigator
. Publish papers in reputable journals/conferences
. Assist in preparing progress reports and research proposals

Qualifications

. Possess a recognized PhD degree in Electrical/ Electronic, Physics or Materials Engineering
. He/she should ideally have a proven track record of publications in leading journals.
. Strong written and oral communication and presentation skills.
. Relevant experience in the field of CMOS nano-electronic devices and nano-fabrication technology would be an added advantage.
. Possess excellent communication and interpersonal skills to work with various stakeholders.
. Meticulous, able to work well under pressure and commitment to meet tight deadlines
. Open to fixed-term contract

Department : Electrical and Computer Engineering

Employee Referral Eligible: No

Job requisition ID : 22093