Research Fellow (2D materials and metal oxides)

Job Description

. Optimize the fabrication technology for transistors based on 2D transition metal dichalcogenides materials and metal oxides (ITO, IGZO)

. Optimize the monolithic 3D integration technology for BEOL transistors

. Develop fabrication processes using sputtering, electron-beam deposition, electron beam lithography, photolithography, dry and wet etching

. Characterize materials and nanodevices using XRD, SEM, TEM, AFM, XPS, Raman spectroscopy, electrical parameter analysers

. Work with colleagues from materials, data scientists, and process technologists.

The successful candidate will be part of a dynamic research team and will have the opportunity to collaborate with leading experts in the field. We offer a competitive salary package and a stimulating research environment with state-of-the-art facilities.

Interested applicants may send their motivation letter and CV via email to [Confidential Information]

Qualifications

Candidate should meet at least 4 criteria from the following list:

• Education: A Ph.D. in Electrical Engineering or a related field from a recognised University/Institute.
• Experience in clean room nanofabrication and characterisation processes.
• Experience in fabrication devices based on 2D and metal oxide materials.
• Excellent written and spoken communication especially in writing and presentation skills.
• Possess excellent communication and interpersonal skills to work with various stakeholders.
• Meticulous, able to work well under pressure and commitment to meet tight deadlines.

Department : Electrical and Computer Engineering

Employee Referral Eligible: No

Job requisition ID : 22101