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As a NAND Cell Device Senior/Principal Engineer in the Singapore Device Technology Development group of Micron Technology Inc., you will perform electrical characterization of advanced 3D NAND memory cells and develop novel device solutions for next‑generation non‑volatile memory technologies.
Scope and responsibilities will align with experience level.
Responsibilities
Characterize NAND memory cell and array behavior to identify device improvement opportunities.
Develop an understanding of performance and reliability requirements for new NAND cells and help refine specifications.
Analyze automated tester data to identify qualification gaps, new device corners, and screening improvements.
Contribute to NAND cell architecture and process definition through device physics and array operation expertise.
Collaborate with process, integration, product, and design teams to address cell challenges and deliver improvement roadmaps.
Qualifications
M.S. or Ph.D. in Electrical Engineering, Physics, Materials Science, or a related field.
Strong foundation in semiconductor device physics and fabrication processes.
Experience with data analysis and scripting tools (e.g., Python, JMP/JSL, Perl) is a plus.
Strong communication skills and ability to drive results in a collaborative R&D environment.
Job ID: 146316347