Your Role
Key responsibilities in your new role
- Development and optimisation of GaN on Si & GaN on Sapphire MOCVD epitaxy processes for power switching applications
- Design GaN epitaxial layer stacks and growth recipes based on device requirements and performance targets
- Develop and implement new epitaxial processes for advanced wafer products
- Troubleshoot and resolve issues that arise during material growth to ensure high-quality epitaxial layers
- Work closely with device engineers to develop next-generation technologies
Your Profile
Qualifications and skills to help you succeed
- Ph.D or Master's Degree in Material Science / Chemistry / Solid State Physics with 5+ years of Industry experience with focus on III-V Hetero-epitaxy MOCVD
- Hands-on experience in operating MOCVD tools (Aixtron / Veeco /others) for AlGaN / GaN HEMT systems on Silicon and Sapphire Substrates
- Experience in Metrology and material characterisation techniques and tools (e.g. AFM, TEM, XRD, PL, Ellipsometry, FTIR)
- Preferred to have experience in III-V device processing tools and processes (e.g. RIE, Wet etch, Passivation)
- Preferred to have understanding of basic device concepts pertaining to AlGaN / GaN HEMTs for power switching applications
- Expertise in data organisation / data analysis
- Good communication skills and ability to work with cross-functional teams in a global R&D organization
